Defect File Format*
- This is a
REQUIRED
file. - Input file provides coordinates and parameters of defects in the initial configuration
- The defect configuration provided by this file can be the final defect configuration from a previous simulation (if it is a
restart
a simulation) - This file provides the
starting simulation time
,simulation cell size
,maximum number of defect types
andmaximum number of parameters
that can be assigned to a defect.
Format@
Snap Shot@
Configuration file 100
# hash symbol marks the end of comment lines
10000
600 608 612
40210
4 5
472 461 583 5 1 4 2 13858 3 9858 4 4000 5 2
141 587 89 5 1 0 2 3 3 3 4 0 5 0
388 381 511 5 1 0 2 45 3 45 4 0 5 0
127 14 83 5 1 0 2 6 3 6 4 0 5 0
9 519 573 5 1 3 2 1007 3 7 4 1000 5 0
412 167 509 5 1 2 2 1000 3 0 4 1000 5 0
498 519 525 5 1 2 2 1000 3 0 4 1000 5 0
505 34 364 5 1 0 2 6 3 6 4 0 5 0
Description@
#
: Marks the end of comment line
10000
: First line of the file corresponds after the comments to the starting simulation time (in seconds)
600 608 612
: Simulation cell x, y, z dimensions in lattice units (LUs) (For a cubic-lattice one LU is equal to half-a-lattice-constant)
40210
: Number of defects in the initial configuration
4 5
: MAX_DTYPES-1 and MAX_NP-1
MAX_DTYPES is the maximum number of defect-complex types allowed in a simulation
MAX_NP is the maximum number of defect parameters IDs (pid
) allowed
Note: In the above example, MAX_DTYPES = 5 and MAX_NP = 6
Important: MAX_NP ≥ MAX_DTYPES
Example
\(\underbrace{\color{blue}{472\quad 461\quad 583}}_{x,y,z~\text{coordinates}}~~~\underbrace{~~\color{red}{5}~~}_{\text{num. of}\\ \text{parameters}\\ \text{initialized}}~~ \underbrace{1\quad 4}_{pid1~~~pv1}~~ \underbrace{2 \quad 13858}_{pid2~~pv2}~~ \underbrace{3\quad 9858}_{pid3~~pv3}~~ \underbrace{4\quad 4000}_{pid4~~~pv4}~~ \underbrace{5\quad 2}_{pid5~~~~pv5}\) (pid
= parameter id and pv
= parameter id value )
- The above line defines the
HeV
type defect.pid1=1
defines the * type* of a defect complex. pid2=2
defines the total defect size.pid3=3
defines the size ofI
orV
size in the defect complex.pid4 = 4
defines the number of He atoms (or other defect type).pid5=5
defines non-size parameter. In the present snap shotpid5
is used to define the 1D-direction of an SIA cluster.- For other defect complexes,
pid5
has no meaning.
Hardwired Aspects@
pid1 = 1
always represents the type of defect complex.pid2 = 2
always represents the total size of the defect complex.pid3 = 3
always represents the size (or number) ofV
(Vacancy) orI
(Interstitial) in a defect complexNegative
coordinates are NOT ALLOWED and should of integer type- Since the
simulation cell dimensions
,number of defect-complex types
and themaximum number of parameters allowed
are set via this input file. Hence, it is aREQUIRED
file.- Initial configuration can have zero defects.
- Parameter ID (
pid
) should be an integer. - Parameter values (
pv
) is a floating-point number andDefault = 0.0
- Number of defect types and the maximum number of parameters are of integer-type
- Simulation cell dimensions should of integer-type
- If there are
n
primary defect types, then frompid3
topid(n+1)
would define the sizes of primary defect types in a defect complex.- Note Any parameter after
pid(n+1)
, e.gpid(n+2)
,pid(n+3)
, will be non-size parameter types.
- Note Any parameter after
Example: Hardwired Behavior of pid
s Representing Primary Defect Sizes
In a simulation with the three primary defects types, Vacancy(V), SIA(I) and helium (He), then total number of possible defect types are V
, I
, He
, HeV
, HeI
. Hence, maximum number of defect types would be 5
or higher
. (Note: It is assumed that HeVI
defect complex would spontaneously becomes He
). In this simulation:
pid2 = 2
defines the total size in the defect complex.pid2 = 3
defines the size (or number of) ofV
(Vacancy) orI
(Interstitial) in a defect complex.pid2 = 4
defines the size (or number of) ofHe
(Vacancy) in a defect complex.
V2
:\(\quad\color{blue}{472\quad 461\quad 583}~~~~~\color{red}{5}~~~~ \underbrace{1\quad 0}_{pid1~~~pv1}~~ \underbrace{2 \quad 2}_{pid2~~pv2}~~ \underbrace{3\quad 2}_{pid3~~pv3}~~ \underbrace{4\quad 0}_{pid4~~~pv4}~~ \underbrace{5\quad 0}_{pid5~~~~pv5}\)
I2
: \(\quad\color{blue}{472\quad 461\quad 583}~~~~~\color{red}{5}~~~~ \underbrace{1\quad 1}_{pid1~~~pv1}~~ \underbrace{2 \quad 2}_{pid2~~pv2}~~ \underbrace{3\quad 2}_{pid3~~pv3}~~ \underbrace{4\quad 0}_{pid4~~~pv4}~~ \underbrace{5\quad 1}_{pid5~~~~pv5}\)
He10
:\(\quad\color{blue}{472\quad 461\quad 583}~~~~~\color{red}{5}~~~~ \underbrace{1\quad 2}_{pid1~~~pv1}~~ \underbrace{2 \quad 10}_{pid2~~pv2}~~ \underbrace{3\quad 0}_{pid3~~pv3}~~ \underbrace{4\quad 10}_{pid4~~~pv4}~~ \underbrace{5\quad 0}_{pid5~~~~pv5}\)
He10V2
: \(\quad\color{blue}{472\quad 461\quad 583}~~~~~\color{red}{5}~~~~ \underbrace{1\quad 3}_{pid1~~~pv1}~~ \underbrace{2 \quad 12}_{pid2~~pv2}~~ \underbrace{3\quad 2}_{pid3~~pv3}~~ \underbrace{4\quad 10}_{pid4~~~pv4}~~ \underbrace{5\quad 0}_{pid5~~~~pv5}\)(helium-vacancy type defect-complex)(Note: pv2
= pv3
+ pv4
)
He10I2
:\(\quad\color{blue}{472\quad 461\quad 583}~~~~~\color{red}{5}~~~~ \underbrace{1\quad 4}_{pid1~~~pv1}~~ \underbrace{2 \quad 12}_{pid2~~pv2}~~ \underbrace{3\quad 2}_{pid3~~pv3}~~ \underbrace{4\quad 10}_{pid4~~~pv4}~~ \underbrace{5\quad 1}_{pid5~~~~pv5}\)(helium-SIA type defect-complex)
Avoid
- It is possible, but KSOME has never been tested with negative parameter IDs (
pid
) - Avoid using negative parameter values (
pv
) for parameter IDs (pid
) representing the total size and size(or number) of primary defect types in a defect complex.
Possible Changes in Future@
- This can be made an OPTIONAL input file by defining
simulation cell dimensions
,number of defect-complex types
and themaximum number parameters
in the input script file- Especially, when the there are NO defects in the starting simulation cell.
- Possibility of using negative parameter values to represent the size of a annihilating defect type. E.g: If the number of interstitials in a defect complex is positive then, those of a vacancy would be a negative number.
Topics to Discuss@
- Use of fake defects to create depth profiles. The fake defects will create real defects according the depth profile.