Defect File Format*
- This is a
REQUIREDfile. - Input file provides coordinates and parameters of defects in the initial configuration
- The defect configuration provided by this file can be the final defect configuration from a previous simulation (if it is a
restarta simulation) - This file provides the
starting simulation time,simulation cell size,maximum number of defect typesandmaximum number of parametersthat can be assigned to a defect.
Format@
Snap Shot@
Configuration file 100
# hash symbol marks the end of comment lines
10000
600 608 612
40210
4 5
472 461 583 5 1 4 2 13858 3 9858 4 4000 5 2
141 587 89 5 1 0 2 3 3 3 4 0 5 0
388 381 511 5 1 0 2 45 3 45 4 0 5 0
127 14 83 5 1 0 2 6 3 6 4 0 5 0
9 519 573 5 1 3 2 1007 3 7 4 1000 5 0
412 167 509 5 1 2 2 1000 3 0 4 1000 5 0
498 519 525 5 1 2 2 1000 3 0 4 1000 5 0
505 34 364 5 1 0 2 6 3 6 4 0 5 0
Description@
# : Marks the end of comment line
10000 : First line of the file corresponds after the comments to the starting simulation time (in seconds)
600 608 612 : Simulation cell x, y, z dimensions in lattice units (LUs) (For a cubic-lattice one LU is equal to half-a-lattice-constant)
40210 : Number of defects in the initial configuration
4 5 : MAX_DTYPES-1 and MAX_NP-1
MAX_DTYPES is the maximum number of defect-complex types allowed in a simulation
MAX_NP is the maximum number of defect parameters IDs (pid) allowed
Note: In the above example, MAX_DTYPES = 5 and MAX_NP = 6
Important: MAX_NP ≥ MAX_DTYPES
Example
\(\underbrace{\color{blue}{472\quad 461\quad 583}}_{x,y,z~\text{coordinates}}~~~\underbrace{~~\color{red}{5}~~}_{\text{num. of}\\ \text{parameters}\\ \text{initialized}}~~ \underbrace{1\quad 4}_{pid1~~~pv1}~~ \underbrace{2 \quad 13858}_{pid2~~pv2}~~ \underbrace{3\quad 9858}_{pid3~~pv3}~~ \underbrace{4\quad 4000}_{pid4~~~pv4}~~ \underbrace{5\quad 2}_{pid5~~~~pv5}\) (pid = parameter id and pv = parameter id value )
- The above line defines the
HeVtype defect.pid1=1defines the * type* of a defect complex. pid2=2defines the total defect size.pid3=3defines the size ofIorVsize in the defect complex.pid4 = 4defines the number of He atoms (or other defect type).pid5=5defines non-size parameter. In the present snap shotpid5is used to define the 1D-direction of an SIA cluster.- For other defect complexes,
pid5has no meaning.
Hardwired Aspects@
pid1 = 1always represents the type of defect complex.pid2 = 2always represents the total size of the defect complex.pid3 = 3always represents the size (or number) ofV(Vacancy) orI(Interstitial) in a defect complexNegativecoordinates are NOT ALLOWED and should of integer type- Since the
simulation cell dimensions,number of defect-complex typesand themaximum number of parameters allowedare set via this input file. Hence, it is aREQUIREDfile.- Initial configuration can have zero defects.
- Parameter ID (
pid) should be an integer. - Parameter values (
pv) is a floating-point number andDefault = 0.0 - Number of defect types and the maximum number of parameters are of integer-type
- Simulation cell dimensions should of integer-type
- If there are
nprimary defect types, then frompid3topid(n+1)would define the sizes of primary defect types in a defect complex.- Note Any parameter after
pid(n+1), e.gpid(n+2),pid(n+3), will be non-size parameter types.
- Note Any parameter after
Example: Hardwired Behavior of pids Representing Primary Defect Sizes
In a simulation with the three primary defects types, Vacancy(V), SIA(I) and helium (He), then total number of possible defect types are V, I, He, HeV, HeI. Hence, maximum number of defect types would be 5 or higher. (Note: It is assumed that HeVI defect complex would spontaneously becomes He). In this simulation:
pid2 = 2defines the total size in the defect complex.pid2 = 3defines the size (or number of) ofV(Vacancy) orI(Interstitial) in a defect complex.pid2 = 4defines the size (or number of) ofHe(Vacancy) in a defect complex.
V2:\(\quad\color{blue}{472\quad 461\quad 583}~~~~~\color{red}{5}~~~~ \underbrace{1\quad 0}_{pid1~~~pv1}~~ \underbrace{2 \quad 2}_{pid2~~pv2}~~ \underbrace{3\quad 2}_{pid3~~pv3}~~ \underbrace{4\quad 0}_{pid4~~~pv4}~~ \underbrace{5\quad 0}_{pid5~~~~pv5}\)
I2: \(\quad\color{blue}{472\quad 461\quad 583}~~~~~\color{red}{5}~~~~ \underbrace{1\quad 1}_{pid1~~~pv1}~~ \underbrace{2 \quad 2}_{pid2~~pv2}~~ \underbrace{3\quad 2}_{pid3~~pv3}~~ \underbrace{4\quad 0}_{pid4~~~pv4}~~ \underbrace{5\quad 1}_{pid5~~~~pv5}\)
He10:\(\quad\color{blue}{472\quad 461\quad 583}~~~~~\color{red}{5}~~~~ \underbrace{1\quad 2}_{pid1~~~pv1}~~ \underbrace{2 \quad 10}_{pid2~~pv2}~~ \underbrace{3\quad 0}_{pid3~~pv3}~~ \underbrace{4\quad 10}_{pid4~~~pv4}~~ \underbrace{5\quad 0}_{pid5~~~~pv5}\)
He10V2: \(\quad\color{blue}{472\quad 461\quad 583}~~~~~\color{red}{5}~~~~ \underbrace{1\quad 3}_{pid1~~~pv1}~~ \underbrace{2 \quad 12}_{pid2~~pv2}~~ \underbrace{3\quad 2}_{pid3~~pv3}~~ \underbrace{4\quad 10}_{pid4~~~pv4}~~ \underbrace{5\quad 0}_{pid5~~~~pv5}\)(helium-vacancy type defect-complex)(Note: pv2 = pv3+ pv4)
He10I2:\(\quad\color{blue}{472\quad 461\quad 583}~~~~~\color{red}{5}~~~~ \underbrace{1\quad 4}_{pid1~~~pv1}~~ \underbrace{2 \quad 12}_{pid2~~pv2}~~ \underbrace{3\quad 2}_{pid3~~pv3}~~ \underbrace{4\quad 10}_{pid4~~~pv4}~~ \underbrace{5\quad 1}_{pid5~~~~pv5}\)(helium-SIA type defect-complex)
Avoid
- It is possible, but KSOME has never been tested with negative parameter IDs (
pid) - Avoid using negative parameter values (
pv) for parameter IDs (pid) representing the total size and size(or number) of primary defect types in a defect complex.
Possible Changes in Future@
- This can be made an OPTIONAL input file by defining
simulation cell dimensions,number of defect-complex typesand themaximum number parametersin the input script file- Especially, when the there are NO defects in the starting simulation cell.
- Possibility of using negative parameter values to represent the size of a annihilating defect type. E.g: If the number of interstitials in a defect complex is positive then, those of a vacancy would be a negative number.
Topics to Discuss@
- Use of fake defects to create depth profiles. The fake defects will create real defects according the depth profile.